In January, 3D-V4 chips appeared in the SK Hynix product catalog. These are the industry's first 72-layer 3D NAND memory chips. According to the company's plans, the production of the first 72-layer memory SK Hynix intends to begin in the second quarter of this year. It should have been a NAND TLC chip with a capacity of 256 Gb (32 GB). The production of a 72-layer 512 Gbit memory was planned to begin in the second half of this year.
The new press release of SK Hynix explains that the company has so far only reported the successful development of a 256-layer 3D NAND TLC with a 256 Gbit capacity. To mass production of these chips it will start in the second half of the year, and not in the second quarter. Earlier analysts noted that SK Hynix and Micron experienced a high level of rejection when switching to multi-layer memory production. Perhaps that's why SK Hynix moved the 72-layer memory by the production time
at a later time.
According to the company, to produce 72-layer 3D NAND chips is how to place 4 billion 72-story skyscrapers on a small coin. But with the same area of the crystal, 1.5 times more memory cells are output than in the case of the previous 48-layer memory. By the way, not only the capacity of crystals is increased (by 30%). Due to the increase in the minimum block size from 9 MB to 13.5 MB, the memory speed increased by 20%.
Based on 72-layer memory, the company plans to produce single-hull drives for mobile electronics and SSD-drives. In one case it is able to pack up to 16 chips and get a single-case 512 GB storage. It seems that in some smart phones next year, solid-state memory will be more than in computer. Related Products :
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