Toshiba and SanDisk beginning the building of Fab 5 in Japan in July last year. The company's had the intentions to run for Fab 5 mass production of solid-state NAND flash memory 300 mm silicon wafers. Today Toshiba published a press release that tells about the beginning of mass production of memory chips on Fab 5. This is the third Toshiba company , using silicon wafers 300 mm size.
Fab 5 building, which has a total production area 187 000 sq ft, was built taking in account seismic threats and sudden power outages.
Now Fab 5 uses a 24 nm process. In the future Toshiba plans to acquire 19 nm process technology . Related Products :
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